Name: SI7155DP-T1-GE3
Brand: Vishay / Siliconix
SKU: SI7155DP-T1-GE3
Rating: 5.0 (99 reviews)

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Umkhiqizi Ingxenye: SI7155DP-T1-GE3

Umkhiqizi: Vishay / Siliconix

Incazelo: MOSFET P-CH 40V 31A/100A PPAK

Isigaba: imikhiqizo ehlukene ye-semiconductor

Umndeni: ama-transistors - ama-fets, ama-mosfets - angashadile

Uchungechunge: -

Kukhona kusitoki: 33093

Ama-datasheets aku-inthanethi: SI7155DP-T1-GE3 PDF

SI7155DP-T1-GE3 Qaphela

I-Chimicron isisabalalisi esizimele sezingxenye ze-elekthronikhi. Sinemithombo ethembekile yezingxenye ze-elekthronikhi, sithengisa kuphela imikhiqizo emisha neyoqobo futhi sinikeza iwaranti yonyaka ongu-1 ngemikhiqizo yethu. Thenga i-SI7155DP-T1-GE3 Vishay / Siliconix ku-chimicron.com. Sinezingxenye ze-33093 ze-SI7155DP-T1-GE3 esitokisini esitholakalayo manje. Hambisa umbuzo we-SI7155DP-T1-GE3 noma thumela i-imeyili [email protected], sizokuthinta emahoreni angu-24.

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Captcha

uchungechunge:TrenchFET® Gen III
iphasela:Tape & Reel (TR)Cut Tape (CT)
isimo sengxenye:Active
uhlobo lwe-fet:P-Channel
ubuchwepheshe:MOSFET (Metal Oxide)
khipha i-voltage yomthombo (vdss):40 V
amanzi amanje - aqhubekayo (id) @ 25°c:31A (Ta), 100A (Tc)
idrayivu ye-voltage (ama-mix rds on, ama-min rds avuliwe):4.5V, 10V
ama-rds ku-(max) @ id, vgs:3.6mOhm @ 20A, 10V
vgs(th) (ubukhulu) @ id:2.3V @ 250µA

ukushajwa kwesango (qg) (ubukhulu) @ vgs:330 nC @ 10 V
vgs (ubukhulu):±20V
amandla okokufaka (ciss) (max) @ vds:12900 pF @ 20 V
fet isici:-
ukuchithwa kwamandla (ubukhulu):6.25W (Ta), 104W (Tc)
izinga lokushisa lokusebenza:-55°C ~ 150°C (TJ)
uhlobo lokukhweza:Surface Mount
iphakheji yedivayisi yomphakeli:PowerPAK® SO-8
iphakethe/ikesi:PowerPAK® SO-8

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