Name: SPD18P06PGBTMA1
Brand: IR (Infineon Technologies)
SKU: SPD18P06PGBTMA1
Rating: 5.0 (99 reviews)

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Umkhiqizi Ingxenye: SPD18P06PGBTMA1

Umkhiqizi: IR (Infineon Technologies)

Incazelo: MOSFET P-CH 60V 18.6A TO252-3

Isigaba: imikhiqizo ehlukene ye-semiconductor

Umndeni: ama-transistors - ama-fets, ama-mosfets - angashadile

Uchungechunge: -

Kukhona kusitoki: 37500

Ama-datasheets aku-inthanethi: SPD18P06PGBTMA1 PDF

SPD18P06PGBTMA1 Qaphela

I-Chimicron isisabalalisi esizimele sezingxenye ze-elekthronikhi. Sinemithombo ethembekile yezingxenye ze-elekthronikhi, sithengisa kuphela imikhiqizo emisha neyoqobo futhi sinikeza iwaranti yonyaka ongu-1 ngemikhiqizo yethu. Thenga i-SPD18P06PGBTMA1 IR (Infineon Technologies) ku-chimicron.com. Sinezingxenye ze-37500 ze-SPD18P06PGBTMA1 esitokisini esitholakalayo manje. Hambisa umbuzo we-SPD18P06PGBTMA1 noma thumela i-imeyili [email protected], sizokuthinta emahoreni angu-24.

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Captcha

uchungechunge:SIPMOS®
iphasela:Tape & Reel (TR)Cut Tape (CT)
isimo sengxenye:Active
uhlobo lwe-fet:P-Channel
ubuchwepheshe:MOSFET (Metal Oxide)
khipha i-voltage yomthombo (vdss):60 V
amanzi amanje - aqhubekayo (id) @ 25°c:18.6A (Tc)
idrayivu ye-voltage (ama-mix rds on, ama-min rds avuliwe):10V
ama-rds ku-(max) @ id, vgs:130mOhm @ 13.2A, 10V
vgs(th) (ubukhulu) @ id:4V @ 1mA

ukushajwa kwesango (qg) (ubukhulu) @ vgs:33 nC @ 10 V
vgs (ubukhulu):±20V
amandla okokufaka (ciss) (max) @ vds:860 pF @ 25 V
fet isici:-
ukuchithwa kwamandla (ubukhulu):80W (Tc)
izinga lokushisa lokusebenza:-55°C ~ 175°C (TJ)
uhlobo lokukhweza:Surface Mount
iphakheji yedivayisi yomphakeli:PG-TO252-3
iphakethe/ikesi:TO-252-3, DPak (2 Leads + Tab), SC-63

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