Name: GA10JT12-263
Brand: GeneSiC Semiconductor
SKU: GA10JT12-263
Rating: 5.0 (99 reviews)

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Umkhiqizi Ingxenye: GA10JT12-263

Umkhiqizi: GeneSiC Semiconductor

Incazelo: TRANS SJT 1200V 25A

Isigaba: imikhiqizo ehlukene ye-semiconductor

Umndeni: ama-transistors - ama-fets, ama-mosfets - angashadile

Uchungechunge: -

Kukhona kusitoki: 170

Ama-datasheets aku-inthanethi: GA10JT12-263 PDF

GA10JT12-263 Qaphela

I-Chimicron isisabalalisi esizimele sezingxenye ze-elekthronikhi. Sinemithombo ethembekile yezingxenye ze-elekthronikhi, sithengisa kuphela imikhiqizo emisha neyoqobo futhi sinikeza iwaranti yonyaka ongu-1 ngemikhiqizo yethu. Thenga i-GA10JT12-263 GeneSiC Semiconductor ku-chimicron.com. Sinezingxenye ze-170 ze-GA10JT12-263 esitokisini esitholakalayo manje. Hambisa umbuzo we-GA10JT12-263 noma thumela i-imeyili [email protected], sizokuthinta emahoreni angu-24.

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uchungechunge:-
iphasela:Tube
isimo sengxenye:Active
uhlobo lwe-fet:-
ubuchwepheshe:SiC (Silicon Carbide Junction Transistor)
khipha i-voltage yomthombo (vdss):1200 V
amanzi amanje - aqhubekayo (id) @ 25°c:25A (Tc)
idrayivu ye-voltage (ama-mix rds on, ama-min rds avuliwe):-
ama-rds ku-(max) @ id, vgs:120mOhm @ 10A
vgs(th) (ubukhulu) @ id:-

ukushajwa kwesango (qg) (ubukhulu) @ vgs:-
vgs (ubukhulu):-
amandla okokufaka (ciss) (max) @ vds:1403 pF @ 800 V
fet isici:-
ukuchithwa kwamandla (ubukhulu):170W (Tc)
izinga lokushisa lokusebenza:175°C (TJ)
uhlobo lokukhweza:Surface Mount
iphakheji yedivayisi yomphakeli:-
iphakethe/ikesi:-

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Iyabuya / Iwaranti	Iyabuya	Ukubuyisela ngokuvamile kuyamukelwa uma sekuqediwe phakathi kwezinsuku ezingu-30 kusukela ngedethi yokuthunyelwa, sicela uxhumane nesevisi yamakhasimende ukuze uthole ukugunyazwa kokubuyisela. Izingxenye kufanele zingasetshenziswa futhi emaphaketheni okuqala. Ikhasimende kufanele lilawule ukuthunyelwa.
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Okunconyelwe Wena

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HUFA75639S3ST-F085A Rochester Electronics	MOSFET N-CH 100V 56A D2PAK	Kukhona kusitoki: 766	$1.03000