TP65H050WSQA

Isithombe ngesethenjwa, sicela usithinte ukuze uthole isithombe sangempela

Umkhiqizi Ingxenye

TP65H050WSQA

Umkhiqizi
Transphorm
Incazelo
GANFET N-CH 650V 36A TO247-3
Isigaba
imikhiqizo ehlukene ye-semiconductor
Umndeni
ama-transistors - ama-fets, ama-mosfets - angashadile
Uchungechunge
-
Kukhona kusitoki
300
Ama-datasheets aku-inthanethi
-
Uphenyo
  • uchungechunge:Automotive, AEC-Q101
  • iphasela:Tube
  • isimo sengxenye:Active
  • uhlobo lwe-fet:N-Channel
  • ubuchwepheshe:GaNFET (Cascode Gallium Nitride FET)
  • khipha i-voltage yomthombo (vdss):650 V
  • amanzi amanje - aqhubekayo (id) @ 25°c:36A (Tc)
  • idrayivu ye-voltage (ama-mix rds on, ama-min rds avuliwe):10V
  • ama-rds ku-(max) @ id, vgs:60mOhm @ 25A, 10V
  • vgs(th) (ubukhulu) @ id:4.8V @ 700µA
  • ukushajwa kwesango (qg) (ubukhulu) @ vgs:24 nC @ 10 V
  • vgs (ubukhulu):±20V
  • amandla okokufaka (ciss) (max) @ vds:1000 pF @ 400 V
  • fet isici:-
  • ukuchithwa kwamandla (ubukhulu):150W (Tc)
  • izinga lokushisa lokusebenza:-55°C ~ 175°C (TJ)
  • uhlobo lokukhweza:Through Hole
  • iphakheji yedivayisi yomphakeli:TO-247-3
  • iphakethe/ikesi:TO-247-3
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