SIRA72DP-T1-GE3

Isithombe ngesethenjwa, sicela usithinte ukuze uthole isithombe sangempela

Umkhiqizi Ingxenye

SIRA72DP-T1-GE3

Umkhiqizi
Vishay / Siliconix
Incazelo
MOSFET N-CH 40V 60A PPAK SO-8
Isigaba
imikhiqizo ehlukene ye-semiconductor
Umndeni
ama-transistors - ama-fets, ama-mosfets - angashadile
Uchungechunge
-
Kukhona kusitoki
300000
Ama-datasheets aku-inthanethi
SIRA72DP-T1-GE3 PDF
Uphenyo
  • uchungechunge:TrenchFET® Gen IV
  • iphasela:Tape & Reel (TR)Cut Tape (CT)
  • isimo sengxenye:Active
  • uhlobo lwe-fet:N-Channel
  • ubuchwepheshe:MOSFET (Metal Oxide)
  • khipha i-voltage yomthombo (vdss):40 V
  • amanzi amanje - aqhubekayo (id) @ 25°c:60A (Tc)
  • idrayivu ye-voltage (ama-mix rds on, ama-min rds avuliwe):4.5V, 10V
  • ama-rds ku-(max) @ id, vgs:3.5mOhm @ 10A, 10V
  • vgs(th) (ubukhulu) @ id:2.4V @ 250µA
  • ukushajwa kwesango (qg) (ubukhulu) @ vgs:30 nC @ 4.5 V
  • vgs (ubukhulu):+20V, -16V
  • amandla okokufaka (ciss) (max) @ vds:3240 pF @ 20 V
  • fet isici:-
  • ukuchithwa kwamandla (ubukhulu):56.8W (Tc)
  • izinga lokushisa lokusebenza:-55°C ~ 150°C (TJ)
  • uhlobo lokukhweza:Surface Mount
  • iphakheji yedivayisi yomphakeli:PowerPAK® SO-8
  • iphakethe/ikesi:PowerPAK® SO-8
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Isigaba Semikhiqizo

ama-diode - rf
1815 Izinto
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