Name: SI7812DN-T1-E3
Brand: Vishay / Siliconix
SKU: SI7812DN-T1-E3
Rating: 5.0 (99 reviews)

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Umkhiqizi Ingxenye: SI7812DN-T1-E3

Umkhiqizi: Vishay / Siliconix

Incazelo: MOSFET N-CH 75V 16A PPAK1212-8

Isigaba: imikhiqizo ehlukene ye-semiconductor

Umndeni: ama-transistors - ama-fets, ama-mosfets - angashadile

Uchungechunge: -

Kukhona kusitoki: 94065

Ama-datasheets aku-inthanethi: SI7812DN-T1-E3 PDF

SI7812DN-T1-E3 Qaphela

I-Chimicron isisabalalisi esizimele sezingxenye ze-elekthronikhi. Sinemithombo ethembekile yezingxenye ze-elekthronikhi, sithengisa kuphela imikhiqizo emisha neyoqobo futhi sinikeza iwaranti yonyaka ongu-1 ngemikhiqizo yethu. Thenga i-SI7812DN-T1-E3 Vishay / Siliconix ku-chimicron.com. Sinezingxenye ze-94065 ze-SI7812DN-T1-E3 esitokisini esitholakalayo manje. Hambisa umbuzo we-SI7812DN-T1-E3 noma thumela i-imeyili [email protected], sizokuthinta emahoreni angu-24.

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uchungechunge:TrenchFET®
iphasela:Tape & Reel (TR)Cut Tape (CT)
isimo sengxenye:Active
uhlobo lwe-fet:N-Channel
ubuchwepheshe:MOSFET (Metal Oxide)
khipha i-voltage yomthombo (vdss):75 V
amanzi amanje - aqhubekayo (id) @ 25°c:16A (Tc)
idrayivu ye-voltage (ama-mix rds on, ama-min rds avuliwe):4.5V, 10V
ama-rds ku-(max) @ id, vgs:37mOhm @ 7.2A, 10V
vgs(th) (ubukhulu) @ id:3V @ 250µA

ukushajwa kwesango (qg) (ubukhulu) @ vgs:24 nC @ 10 V
vgs (ubukhulu):±20V
amandla okokufaka (ciss) (max) @ vds:840 pF @ 35 V
fet isici:-
ukuchithwa kwamandla (ubukhulu):3.8W (Ta), 52W (Tc)
izinga lokushisa lokusebenza:-55°C ~ 150°C (TJ)
uhlobo lokukhweza:Surface Mount
iphakheji yedivayisi yomphakeli:PowerPAK® 1212-8
iphakethe/ikesi:PowerPAK® 1212-8

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Iyabuya / Iwaranti	Iyabuya	Ukubuyisela ngokuvamile kuyamukelwa uma sekuqediwe phakathi kwezinsuku ezingu-30 kusukela ngedethi yokuthunyelwa, sicela uxhumane nesevisi yamakhasimende ukuze uthole ukugunyazwa kokubuyisela. Izingxenye kufanele zingasetshenziswa futhi emaphaketheni okuqala. Ikhasimende kufanele lilawule ukuthunyelwa.
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